The influence of hydrogen plasma and annealing on GaN film grown by plasma-assisted MOCVD
COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices - Trang 531-534 - 2000
Tóm tắt
We have studied the influence of hydrogen plasma treatment and annealing on GaN mms grown by plasma-assisted metal organic chemical vapor deposition (MOCVD). The X-ray diffraction (XRD) pattern of GaN films grown without assistance of hydrogen plasma show misoriented polycrystalline structure, while those grown with the assistance of hydrogen plasma show a crystalline structure with (0001) orientation. Post-growth hydrogenation and annealing reduces the carrier concentration of fUms grown without hydrogen plasma, but does not give a significant effect for mms grown with the assistance of a hydrogen plasma.
Từ khóa
#Hydrogen #Annealing #Gallium nitride #MOCVD #Plasma applications #Optical films #Plasma temperature #Plasma chemistry #Plasma measurements #Plasma materials processingTài liệu tham khảo
10.1143/JJAP.37.L1109
10.1143/JJAP.39.L25
10.1143/JJAP.38.L230
10.1109/55.658598
nakamura, 1996, Jpn J Appl Phys, 35, 74l, 10.1143/JJAP.35.L74