The improvement of ohmic contact of Ti/Al/Ni/Au to AlGaN/GaN HEMT by multi-step annealing method

Solid-State Electronics - Tập 53 - Trang 955-958 - 2009
Qian Feng1, Li-Mei Li1, Yue Hao1, Jin-Yu Ni1, Jin-Cheng Zhang1
1The Institute of Microelectronics, Xi’Dian University, Xi’an 710071, China

Tài liệu tham khảo

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