The effect of Zn<sub>1−<i>x</i></sub>Sn<i><sub>x</sub></i>O<i><sub>y</sub></i> buffer layer thickness in 18.0% efficient Cd‐free Cu(In,Ga)Se<sub>2</sub> solar cells

Progress in Photovoltaics: Research and Applications - Tập 21 Số 8 - Trang 1588-1597 - 2013
Johan Lindahl1, Jörn Timo Wätjen1, Adam Hultqvist1, Tove Ericson1, Marika Edoff1, Tobias Törndahl1
1Ångström Solar Center, Solid State Electronics Uppsala University P.O. Box 534 SE‐751 21 Uppsala Sweden

Tóm tắt

ABSTRACTThe influence of the thickness of atomic layer deposited Zn1−xSnxOy buffer layers and the presence of an intrinsic ZnO layer on the performance of Cu(In,Ga)Se2 solar cells are investigated. The amorphous Zn1−xSnxOy layer, with a [Sn]/([Sn] + [Zn]) composition of approximately 0.18, forms a conformal and in‐depth uniform layer with an optical band gap of 3.3 eV. The short circuit current for cells with a Zn1−xSnxOy layer are found to be higher than the short circuit current for CdS buffer reference cells and thickness independent. On the contrary, both the open circuit voltage and the fill factor values obtained are lower than the references and are thickness dependent. A high conversion efficiency of 18.0%, which is comparable with CdS references, is attained for a cell with a Zn1−xSnxOy layer thickness of approximately 13 nm and with an i‐ZnO layer. Copyright © 2012 John Wiley & Sons, Ltd.

Từ khóa


Tài liệu tham khảo

10.1002/pip.1078

10.1016/S0022-0248(98)00503-X

10.1149/1.1838141

10.1002/pip.955

10.1016/j.tsf.2004.11.118

ContrerasMA NakadaT HongoM PudovAO SitesJR.ZnO/ZnS(O OH)/Cu(In Ga)Se2/Mo solar cell with 18.6% efficiency.Proceedings of 3rd World Conference on Photovoltaic Energy Conversion Osaka vol.1 2003;570–573.

10.1016/S0040-6090(00)01737-5

10.1016/j.solmat.2004.08.017

HultqvistA Platzer‐BjörkmanC TörndahlT RuthM EdoffM.Optimization of i‐ZnO window layers for Cu(In Ga)Se2solar cells with ALD buffers.Proceedings of the 22nd European Photovoltaic Solar Energy Conference Milano 2007;2381–2384.

10.1016/j.solmat.2010.12.009

10.1016/S0927-0248(02)00112-5

10.1002/pip.1039

10.1002/pip.1153

EdoffM WoldegiorgisS NeretnieksP RuthM KesslerJ StoltL.CIGS submodules with high performance and high manufacturability.Proceedings of the 19th European Photovoltaic Solar Energy Conference and Exhibition Paris 2004;1690–1693.

10.1063/1.58006

10.1088/0022-3727/22/9/024

10.1016/0025-5408(68)90023-8

Abelès F, 1972, Optical properties of solids, 303

10.1116/1.2839860

10.1021/am900321f

10.1002/pssb.200743458

10.1002/pip.518

10.1117/12.846351

SternerJ KesslerJ Bodegå̊rdM StoltL.Atomic layer epitaxy growth of ZnO buffer layers in Cu(In Ga)Se2solar cells.Proceedings of the 2nd World Conference on Photovoltaic Energy Conversion 1998;1145–1148.

SternerJ Platzer‐BjörkmanC StoltL.XPS/UPS monitoring of ALCVD ZnO growth on Cu(In Ga)Se2absorbers.Proceedings of the 17th European Photovoltaic Solar Energy Conference Munich vol.II 2001;1118–1121.

KesslerJ VelthausKO RuckhM LaichingerR SchockH LincotD OrtegaR VedelJ.Chemical bath deposition of CdS on CuInSe2 etching effects and growth kinetics.Proceedings of the 6th International Photovoltaic Science and Engineering Conference New Delhi 1992;1005–1010.

LincotD Ortega‐BorgesR VedelJ RuckhM KesslerJ VelthausKO HariskosD SchockHW.Chemical bath deposition of CdS on CuInSe2: Combining dry and wet processes for high efficiency thin film solar cells.Proceedings of the 11th European Photovoltaics Solar Energy Conference Montreux 1992;870–873.

10.1016/j.susc.2004.03.055

10.1002/pip.957

10.1002/pip.859

10.1103/PhysRev.93.632

10.1088/0370-1301/67/10/306

10.1016/S0040-6090(00)01736-3

Green MA, 1982, Solar Cells: Operating Principles, Technology and System Applications, 96

10.1016/S0040-6090(99)00792-0

OlsenL AguilarH AddisF LeiW LiJ.CIS solar cells with ZnO buffer layer.Proceedings 25th IEEE photovoltaic Specialists Conference Washington 1996;997–1000.

Thông tin
Thông tin xuất bản

Progress in Photovoltaics: Research and Applications

Tập 21 Số 8

1588-1597

Thông tin tác giả