The dependence of drain-induced barrier lowering on substrate biasing in short channel PMOS devices at 77 K

Solid-State Electronics - Tập 33 - Trang 1265-1273 - 1990
Z.X. Yan1, M.J. Deen1
1School of Engineering Science, Simon Fraser University, Burnaby, British Columbia, Canada V5A 1S6

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