The concentration dependence of acceptor-state radii in p-Hg0.78Cd0.22Te crystals
Tóm tắt
Hopping conduction in undoped p-Hg0.78Cd0.22Te crystals containing native double-charged acceptors (Hg vacancies) with concentrations of 1016–1018cm−3 was studied. Electrical conduction with a variable hopping range is dominant in the entire concentration range at temperatures below 6–16 K. The measured parameters of this conduction were used to calculate the acceptor-state radius as a function of vacancy concentration N
A
. It is shown that, for N
A
<4×1017 cm−3, the low-temperature conduction occurs via the vacancy states whose radius is independent of N
A
. For N
A
>5×1017 cm−3, the hopping conduction is governed by the states of uncontrolled shallow-level impurity acceptors. The radius of the state for these defects increases with increasing N
A
owing to an increase in the effective permittivity of the medium.
Tài liệu tham khảo
N. F. Mott and E. A. Davis, Electronic Processes in Non-Crystalline Materials (Clarendon Press, Oxford, 1979; Mir, Moscow, 1982).
B. I. Shklovskii and A. L. Efros, Electronic Properties of Doped Semiconductors (Nauka, Moscow, 1979; Springer-Verlag, New York, 1984).
J. M. Ziman, Models of Disorder: The Theoretical Physics of Homogeneously Disordered Systems (Cambridge Univ. Press, Cambridge, 1979; Mir, Moscow, 1982).
I. M. Tsidil’kovskii, G. I. Kharus, and N. G. Shelushinina, Impurity States and Transport Phenomena in Zero-Gap Semiconductors (Sverdlovsk, 1987).
A. I. Elizarov and V. I. Ivanov-Omskii, Fiz. Tekh. Poluprovodn. (Leningrad) 15(5), 927 (1981) [Sov. Phys. Semicond. 15, 531 (1981)].
A. I. Elizarov, V. V. Bogoboyashchii, and N. N. Berchenko, Fiz. Tekh. Poluprovodn. (Leningrad) 18(3), 455 (1984) [Sov. Phys. Semicond. 18, 283 (1984)].
B. L. Gel’mont, A. R. Gadzhiev, B. L. Shklovskii, et al., Fiz. Tekh. Poluprovodn. (Leningrad) 8(12), 2377 (1974) [Sov. Phys. Semicond. 8, 1549 (1974)].
V. V. Bogoboyashchiy, Proc. SPIE 3486, 325 (1997).
V. V. Bogoboyashchii, in Scientific Proceedings of Kremenchug State Polytechnic Institute, Vol. 1: Problems in the Developmant of New Machines and Technologies (Kremenchug. Gos. Univ., Kremenchug, 1999), p. 269.
V. V. Bogoboyashchii, S. G. Gasan-zade, and G. A. Shepel’skii, Fiz. Tekh. Poluprovodn. (St. Petersburg) 34(4), 411 (2000) [Semiconductors 34, 398 (2000)].