The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

American Association for the Advancement of Science (AAAS) - Tập 281 Số 5379 - Trang 956-961 - 1998
Shuji Nakamura1
1The author is in the Department of Research and Development, Nichia Chemical Industries, 491 Oka, Kaminaka, Anan, Tokushima 774, Japan. E-mail: [email protected]

Tóm tắt

REVIEW High-efficiency light-emitting diodes emitting amber, green, blue, and ultraviolet light have been obtained through the use of an InGaN active layer instead of a GaN active layer. The localized energy states caused by In composition fluctuation in the InGaN active layer are related to the high efficiency of the InGaN-based emitting devices. The blue and green InGaN quantum-well structure light-emitting diodes with luminous efficiencies of 5 and 30 lumens per watt, respectively, can be made despite the large number of threading dislocations (1 × 10 8 to 1 × 10 12 cm −2 ). Epitaxially laterally overgrown GaN on sapphire reduces the number of threading dislocations originating from the interface of the GaN epilayer with the sapphire substrate. InGaN multi-quantum-well structure laser diodes formed on the GaN layer above the SiO 2 mask area can have a lifetime of more than 10,000 hours. Dislocations increase the threshold current density of the laser diodes.

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American Association for the Advancement of Science (AAAS)

Tập 281 Số 5379

956-961

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