Terahertz spectroscopy with a Josephson oscillator and a SINIS bolometer

The voltage response of a thin-film normal-metal hot-electron bolometer based on a SINIS (superconductor-insulator-normal metal-insulator-superconductor) structure to the radiation of a high-temperature Josephson junction in the terahertz frequency region was measured. Bolometers were integrated with planar log-periodic and double-dipole antennas, and Josephson junctions were integrated with log-periodic antennas. Measurements showed that the Josephson junction at a temperature of 260 mK was overheated by the transport current, so that its electron temperature exceeded 3 K at a bias voltage of 1 mV. The maximum response of a bolometer with a double-dipole antenna was observed at a frequency of 300 GHz, which agreed well with the calculated value. The Josephson radiation was observed at frequencies up to 1.7 THz. The voltage response of a bolometer reached 4×108 V/W, and the total noise-equivalent power reached 1.5×10−17 W/Hz1/2.