Temperature stability of HgCdTe n-on-p junctions formed by reactive ion etching
COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices - Trang 81-84
Tóm tắt
Examination of the stability of reactive ion etching (RIE) induced n on p bulk junctions has been undertaken. Two possible type conversion mechanisms are proposed and their implications for bulk junction stability are discussed. Secondary ion mass spectrometry (SIMS) and electrical measurements have been performed before and after baking at 100/spl deg/C, giving an insight into the junction formation mechanism and associated temperature stability.
Từ khóa
#Temperature #Stability #Etching #Deuterium #Diodes #Zinc compounds #Hydrogen #Mass spectroscopy #Photodiodes #PassivationTài liệu tham khảo
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