Temperature-dependent characteristics of InP/In/sub 0.53/Ga/sub 0.34/Al/sub 0.13/As heterojunction bipolar transistor

COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices - Trang 238-241
Hsi-Jen Pan1, Chih-Hung Yen1, Kuo-Hui Yu1, Kun-Wei Lin1, Kuan-Po Lin2, Wen-Huei Chiou1, Hung-Ming Chuang1, Wen-Chau Liu1
1Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan
2Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan

Tóm tắt

Temperature-dependent DC performances of InP/InGaAlAs heterojunction bipolar transistors (HBTs) using the InGaAlAs quaternary alloy as the base and collector layers are studied and reported. When compared with conventional InP/InGaAs HBTs, the device studied exhibits a higher common-emitter breakdown voltage and a lower output conductance even at high temperature. In addition, with decreasing temperature from 25 toward -196/spl deg/C, an irregular temperature behavior of current gain has been investigated.

Từ khóa

#Indium phosphide #Heterojunction bipolar transistors #Electric breakdown #Photonic band gap #Optoelectronic devices #Indium gallium arsenide #Aluminum alloys #Temperature distribution #Substrates #Ohmic contacts

Tài liệu tham khảo

10.1109/55.192838 10.1088/0268-1242/13/6/015 10.1109/55.644089 10.1116/1.589216 10.1109/68.803047
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COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices

238-241

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