Technology and characterisation of GaAsN/GaAs heterostructures for photodetector applications
Tóm tắt
The nitrogen-containing conventional AIIIBV semiconductor alloys, so-called diluted nitrides (AIIIBV-N), have been extensively studied recently. Unusual properties of these materials make them very promising for applications in lasers and very efficient multijunction solar cells. This work presents the technology and properties of undoped GaAs1-xNx/GaAs heterostructures used as active regions in the construction of metal-semiconductor-metal (MSM) photodetectors. The atmospheric pressure metal organic vapour phase epitaxy (APMOVPE) was applied for growing MSM test structures. Their structural and optical properties were examined using high resolution X-ray diffraction (HRXRD), photoluminescence (PL), and photoreflectance spectroscopy (PR). Chemical wet etching was applied for forming an active region and a multifinger Schottky metallization was used as MSM contacts. Dark and illuminated current-voltage characteristics were measured. Based on the obtained results, the main detector parameters as responsivity and spectral response were estimated
Tài liệu tham khảo
U. Tisch, E. Finkman, and J. Salzman, “The anomalous band gap bowing in GaAsN”, Appl. Phys. Lett. 81, 463 (2002).
M. Kondow, K. Uomi, A. Niwa, T. Kitatani, S. Watahiki, and Y. Yazawa, “GaInNAs: a novel material for long-wavelength-range laser diodes with excellent high-temperature performance”, Jap. J. Appl. Phys. 35, 1273 (1996).
R.S. Kurtz, A.A. Allerman, C.H. Seager, R.M. Sieg, and E.D. Jones, “Minority carrier diffusion and defects in GaAsN grown by molecular beam epitaxy”, Appl. Phys. Lett. 77, 400 (2000).
J. Misiewicz, G. Sêk, R. Kudrawiec, and P. Sitarek, “Three beam photoreflectance as a powerful method to investigate semiconductor heterostructures”, Thin Solid Films 450, 14 (2004).
J. Toivonen, “Growth and properties of GaAsN structures”, Ph.D. Thesis, Helsinki University of Technology, 2003.
R. Kudrawiec, “Photoreflectance and photoluminescence investigations of nitrogen diluted III-V alloys and their low dimensional structures”, Ph.D. Thesis, Institute of Physics, Wrocław University of Technology, 2004.
S. Francoeur, S.A. Nikishin, C. Jin, Y. Qiu, and H. Temkin, “Excitons bound to nitrogen clusters in GaAsN”, Appl. Phys. Lett. 75, 1538 (1999).
H. Yaguchi, S. Kikuchi, Y. Hijikata, S. Yoshida, D. Aoki, and K. Onabe, “Photoluminescence study on temperature dependence of band gap energy of GaAsN alloys”, Phys. Stat. Sol. 228, 273 (2001).
I.A. Buyanova, W.M. Chen, and C.W. Tu, “Magneto-optical and light-emission properties of III-As-N semiconductors”, Semicond. Sci. Technol. 17, 815 (2002).
B. Ściana, D. Pucicki, D. Radziewicz, J. Serafińczuk, J. Kozłowski, B. Paszkiewicz, and M. Tłaczała, P. Poloczek, G. Sęk, J. Misiewicz, “APMOVPE growth and characterisation of undoped GaAsN/GaAs heterostructures”, Vacuum 82, 377 (2008).