Techniques for micromachining multilayered structures in silicon
COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices - Trang 407-410
Tóm tắt
The effects of wet anisotropic etching of [100] silicon were studied with mask edges aligned at 45/spl deg/ to the primary wafer. Samples were etched in aqueous KOH solution with the addition of isopropyl alcohol (IPA). The addition of IPA caused a change from the formation of vertical {100} walls to sloping {110} walls only for solutions below a critical concentration and temperature. The dependence on concentration was then applied to produce a new multilayer structure with {110} walls fabricated on top of {100} walls.
Từ khóa
#Micromachining #Silicon #Etching #Anisotropic magnetoresistance #Optical resonators #Optical surface waves #Temperature #Nonhomogeneous media #Optical waveguides #MicroelectronicsTài liệu tham khảo
10.1016/S0924-4247(97)80118-5
bao, 1996, Sens Actuators A, 63, 217, 10.1016/S0924-4247(97)80508-0
price, 1973, Semiconductor Silicon 1973, 339
zubel, 2000, Sens Actuators A, 84, 118, 10.1016/S0924-4247(99)00347-7
kutchoukov, 2000, Sens Actuators A, 85, 377, 10.1016/S0924-4247(00)00416-7
rosengren, 1991, J Micromech and Microeng, 2, 75
10.1149/1.2086277
10.1063/1.1657233
vangbo, 1996, J Microelectromech Syst, 6, 42
merlos, 1993, Sens Actuators A, 37 38, 737, 10.1016/0924-4247(93)80125-Z
zubel, 1998, Sens Actuators A, 70, 259
seidel, 1990, Integrated Micro-Motion Systems-Micromachining Control and Applications, 956
10.1088/0960-1317/1/4/002
kang, 1997, Sens Actuators A, 62, 646, 10.1016/S0924-4247(97)01500-8