System level model of damping effects for highly perforated torsional microstructures

G. Schrag1, R. Sattler1, G. Wachutka1
1Institute for Physics of Electrotechnology, Munich University of Technology, Germany

Tóm tắt

We propose a mixed-level simulation scheme for squeeze film damping (SQFD) effects in microdevices, which makes it possible to include damping effects in system-level models of entire microsystems in a natural, physical-based, and flexible way. Our approach allows also for complex geometries, large deflections and coupling to other energy and signal domains. Applying the methodology to torsional structures yields results which are in excellent agreement with accurate FEM simulations based on the 3D Navier-Stokes equations, thus demonstrating the practicality and quality of our approach. For device geometries with densely distributed perforations we propose a further order reduction by merging adjacent holes in one equivalent network element; in this way we are able to simulate highly perforated structures at affordable computational expense. The predictive simulation of an industrial microrelay featuring 3000 perforations validated by experimental analysis, illustrates the power of our methodology.

Từ khóa

#Damping #Microstructure #Computational modeling #Navier-Stokes equations #Computational geometry #Merging #Solid modeling #Computer networks #Distributed computing #Analytical models

Tài liệu tham khảo

10.1088/0960-1317/8/3/005 10.1007/978-3-7091-6244-6_39 schrag, 2002, Physically-based Modeling of Squeeze Film Damping by Mixed-Level System Simulation, Sensors and Actuators A, 97 98c, 193, 10.1016/S0924-4247(01)00840-8 sattler, 2002, Modelling of an electrostatic torsional actuator: demonstrated with an RF MEMS switch, Sensors & Actuators A, 97 98c, 339 kweon, 0, Modeling and Dynamic Simulation for Electrostatically Driven Micromirror, MSM 2001, 334