I.E. Kalabin1, T.I. Grigorieva1, L.D. Pokrovsky1, D.V. Sheglov1, D.I. Shevtsov2, V.V. Atuchin1
1Institute of Semiconductor Physics, Novosibirsk, Russia
2Perm State University, Perm, Russia
Tóm tắt
The topmost surface of crystal during Ti-indiffused LiNbO/sub 3/ waveguide preparation was studied using atomic force microscopy and high energy electron diffraction. The formation of the flat terraces with height step /spl sim/0.24nm as a result of high temperature annealing has been detected. The global changing of surface morphology induced by Ti diffusing was observed. No new phase formation on the surface was detected.