Subthreshold characteristics of electrostatically controlled transistors and thyristors. 1. Shallow planar gate
Tóm tắt
A rigorous analytic theory of the blocking state of electrostatically contolled thyristors and transistors and a shallow planar gate of arbitrary width is constructed in the model with a completely depleted base. Formulas are obtained for the subthreshold currents and blocking factor g as functions of the electrode potentials and device parameters: source and gate widths and thickness and doping of the base. It is shown that sufficiently heavy doping not only influences the parameters of the current-voltage characteristics and the factor g but it also changes the qualitative form of the current-voltage characteristic near threshold.
Tài liệu tham khảo
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