Subgrain boundaries in laterally seeded silicon-on-oxide formed by graphite strip heater recrystallization

Applied Physics Letters - Tập 40 Số 5 - Trang 388-390 - 1982
Russell F. Pinizzotto1, Hon Wai Lam1, B. L. Vaandrager1
1Texas Instruments Incorporated, Central Research Laboratories, P. O. Box 225936, MS 147, Dallas, Texas 75265

Tóm tắt

A detailed microstructural analysis of laterally seeded silicon-on-oxide formed by scanning graphite strip heater recrystallization is presented for the first time. The recrystallized top silicon layer has a (100) orientation, but contains many subgrain boundaries formed by dislocation coalescence. The subgrains are misoriented by <0.3° and have no internal defects. β-SiC contamination of the top silicon layer was detected. It is probably due to particulate contamination from the top graphite strip heater.

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Tài liệu tham khảo

1980, Jpn. J. Appl. Phys., 19, 123

1981, J. Electrochem. Soc., 128, 1981, 10.1149/1.2127779

1981, Appl. Phys. Lett., 38, 365, 10.1063/1.92339

1981, Appl. Phys. Lett., 39, 561, 10.1063/1.92794

1981, Appl. Phys. Lett., 39, 308, 10.1063/1.92724

1972, J. Electrochem. Soc., 119, 948, 10.1149/1.2404374

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Thông tin xuất bản

Applied Physics Letters

Tập 40 Số 5

388-390

Thông tin tác giả