Study on Mechanisms of Photon-Induced Material Removal on Silicon at Atomic and Close-to-Atomic Scale

Fang FZ (2020) On atomic and close-to-atomic scale manufacturing-development trend of manufacturing technology. China Mech Eng 31:1009–1021

Fang FZ (2020) Atomic and close-to-atomic scale manufacturing: perspectives and measures. Int J Extreme Manuf 2:030201

Liu Y, Duan X, Shin HJ, Park S, Huang Y, Duan X (2021) Promises and prospects of two-dimensional transistors. Nature 591:43–53

Chen S, Li W, Wu J, Jiang Q, Tang M, Shutts S et al (2016) Electrically pumped continuous-wave III–V quantum dot lasers on silicon. Nat Photon 10:307

Lawrie WIL, Eenink HGJ, Hendrickx NW, Boter JM, Petit L, Amitonov SV et al (2020) Quantum dot arrays in silicon and germanium. Appl Phys Lett 116:080501

Eigler DM, Schweizer EK (1990) Positioning single atoms with a scanning tunnelling microscope. Nature 344:524–526

Sugimoto Y, Abe M, Morita S (2015) Atom manipulation using atomic force microscopy at room temperature. Imaging and manipulation of adsorbates using dynamic force microscopy. Springer, Cham, pp 49–62

Mathew PT, Rodriguez BJ, Fang FZ (2020) Atomic and close-to-atomic scale manufacturing: a review on atomic layer removal methods using atomic force microscopy. Nanomanuf Metrol 3:167–186

Chen L, Wen J, Zhang P, Yu B, Chen C, Ma T et al (2018) Nanomanufacturing of silicon surface with a single atomic layer precision via mechanochemical reactions. Nat Commun 9:1–7

George SM (2010) Atomic layer deposition: an overview. Chem Rev 110:111–131

Li S, Xu J, Wang L, Yang N, Ye X, Yuan X et al (2020) Effect of post-deposition annealing on atomic layer deposited SiO2 film for silicon surface passivation. Mat Sci Semicon Proc 106:104777

Abdulagatov AI, George SM (2018) Thermal atomic layer etching of silicon using O2, HF, and Al(CH3)3 as the reactants. Chem Mater 30:8465–8475

Cheng PH, Wang CI, Ling CH, Lu CH, Yin YT, Chen MJ (2019) Low-temperature conformal atomic layer etching of Si with a damage-free surface for next-generation atomic-scale electronics. ACS Appl Nano Mater 2:4578–4583

Oehrlein GS, Metzler D, Li C (2015) Atomic layer etching at the tipping point: an overview. ECS J Solid State Sc 4:N5041

Kanarik KJ, Lill T, Hudson EA, Sriraman S, Tan S, Marks J et al (2015) Overview of atomic layer etching in the semiconductor industry. J Vac Sci Technol A 33:020802

Huard CM, Zhang Y, Sriraman S, Paterson A, Kanarik KJ, Kushner MJ (2017) Atomic layer etching of 3D structures in silicon: self-limiting and nonideal reactions. J Vac Sci Technol A 35:031306

Khan SA, Suyatin DB, Sundqvist J, Graczyk M, Junige M, Kauppinen C et al (2018) High-definition nanoimprint stamp fabrication by atomic layer etching. ACS Appl Nano Mater 1:2476–2482

Song EJ, Kim JH, Kwon JD, Kwon SH, Ahn JH (2018) Silicon atomic layer etching by two-step plasma process consisting of oxidation and modification to form (NH4)2SiF6, and its sublimation. Jpn J Appl Phys 57:106505

Ishii M, Meguro T, Gamo K, Sugano T, Aoyagi Y (1993) Digital etching using KrF excimer laser: approach to atomic-order-controlled etching by photo induced reaction. Jap J Appl Phys 32:6178

Moon SW, Jeon C, Hwang HN, Hwang CC, Song HJ, Shin HJ et al (2007) Nanolayer patterning based on surface modification with extreme ultraviolet light. Adv Mater 19:1321–1324

Guo B, Sun J, Hua Y, Zhan N, Jia J, Chu K (2020) Femtosecond laser micro/nano-manufacturing: theories, measurements, methods, and applications. Nanomanuf Metrol 3:26–67

Kullmer R, Bäuerle D (1987) Laser-induced chemical etching of silicon in chlorine atmosphere. Appl Phys A-Mater 43:227–232

Rhodin T (1995) Photochemical desorption from chlorinated Si (100) and Si (111) surfaces-mechanisms and models. Prog Surf Sci 50:131–146

Meguro T, Aoyagi Y (1997) Digital etching of GaAs. Appl Surf Sci 112:55–62

Meguro T, Sakai K, Yamamoto Y, Sugano T, Aoyagi Y (1996) Tunable UV laser induced digital etching of GaAs: wavelength dependence of etch rate and surface processes. Appl Surf Sci 106:365–368

Knizikevičius R (2003) Evaluation of desorption activation energy of SiCl2 molecules. Surf Sci 531:L347–L350

Amasuga H, Nakamura M, Mera Y, Maeda K (2002) The atomic processes of ultraviolet laser-induced etching of chlorinated silicon (111) surface. Appl Surf Sci 197:577–580

Iimori T, Hattori K, Shudo K, Iwaki T, Ueta M, Komori F (1998) Laser-induced mono-atomic-layer etching on Cl-adsorbed Si (111) surfaces. Appl Surf Sci 130:90–95

Durbin TD, Simpson WC, Chakarian V, Shuh DK, Varekamp PR, Lo CW, Yarmoff JA (1994) Stimulated desorption of Cl+ and the chemisorption of Cl2 on Si (111)-7×7 and Si (100)-2×1. Surf Sci 316:257–266

Hattori K, Shudo K, Iimori T, Komori F, Murata Y (1996) Laser-induced desorption from silicon (111) surfaces with adsorbed chlorine atoms. J Phys-Condens Mat 8:6543

Smith PV, Cao PL (1995) Semiempirical calculations of the chemisorption of chlorine on the Si (111) 7*7 surface. J Phys-Condens Mat 7:7125

De Wijs GA, De Vita A, Selloni A (1997) Mechanism for SiCl2 formation and desorption and the growth of pits in the etching of Si (100) with chlorine. Phys Rev Lett 78:4877

Sakurai S, Nakayama T (2002) Electronic structures and etching processes of chlorinated Si (111) surfaces. Jpn J Appl Phys 41:2171

Shudo K, Kirimura T, Tanaka Y, Ishikawa T, Tanaka M (2006) Quantitative analysis of thermally induced desorption during halogen-etching of a silicon (111) surface. Surf Sci 600:3147–3153

De Wijs GA, De Vita A, Selloni A (1998) First-principles study of chlorine adsorption and reactions on Si (100). Phys Rev B 57:10021

Halicioglu T, Srivastava D (1999) Energetics for bonding and detachment steps in etching of Si by Cl. Surf Sci 437:L773–L778

Knotek ML, Feibelman PJ (1978) Ion desorption by core-hole Auger decay. Phys Rev Lett 40:964

Tachibana T, Yamashita T, Nagira M, Yabuki H, Nagashima Y (2018) Efficient and surface site-selective ion desorption by positron annihilation. Sci Rep 8:1–7

Menzel D, Robert G (1964) Desorption from metal surfaces by low-energy electrons. J Chem Phys 41:3311–3328

Lackner M, Lucaßen D, Hasselbrink E (2018) Bimodal velocity distributions in the photodesorption of CO from Si (100) suggest V-to-T energy transfer. Chem Phys Lett 713:277–281

Antoniewicz PR (1980) Model for electron-and photon-stimulated desorption. Phys Rev B 21:3811

Abujarada S, Flathmann C, Koehler SP (2017) Translational and rotational energy distributions of NO photodesorbed from Au (100). J Phys Chem C 121:19922–19929

Yonezawa T, Daimon H, Nakatsuji K, Sakamoto K, Suga S, Namba H, Ohta T (1994) Photon-stimulated desorption mechanism of Cl+ ions from Cl/Si (111) surface. Jpn J Appl Phys 33:2248

Kanasaki J, Nakamura M, Ishikawa K, Tanimura K (2002) Primary processes of laser-induced selective dimer-layer removal on Si (001)−(2×1). Phys Rev Lett 89:257601

Lide DR (2004) CRC handbook of chemistry and physics. CRC Press, Boca Raton

Feil H, Baller TS, Dieleman J (1992) Effects of post-desorption collisions on the energy distribution of SiCl molecules pulsed-laser desorbed from Cl-covered Si surfaces: Monte-Carlo simulations compared to experiments. Appl Phys A-Mater 55:554–560

Saalfrank P, Kosloff R (1996) Quantum dynamics of bond breaking in a dissipative environment: indirect and direct photodesorption of neutrals from metals. J Chem Phys 105:2441–2455

Boendgen G, Saalfrank P (1998) STM-induced desorption of hydrogen from a silicon surface: an open-system density matrix study. J Phys Chem B 102:8029–8035

Saalfrank P, Baer R, Kosloff R (1994) Density matrix description of laser-induced hot electron mediated photodesorption of NO from Pt (111). Chem Phys Lett 230:463–472

Balint-Kurti GG, Ward CL, Marston CC (1991) Two computer programs for solving the Schrödinger equation for bound-state eigenvalues and eigenfunctions using the Fourier grid Hamiltonian method. Comput Phys Commun 67:285–292

Berman M, Kosloff R, Tal-Ezer H (1992) Solution of the time-dependent Liouville-von Neumann equation: dissipative evolution. J Phys A-Math Gen 25:1283

Tal-Ezer H (1988) High degree interpolation polynomial in Newton form. Tech Rep :88–39 ICASE.

Driscoll TA (1996) Algorithm 756: a MATLAB toolbox for Schwarz-Christoffel mapping. ACM T Math Software (TOMS) 22:168–186

Saalfrank P (1996) Stochastic wave packet vs. direct density matrix solution of Liouville-von Neumann equations for photodesorption problems. Chem Phys 211:265–276

Tersoff J (1988) Empirical interatomic potential for silicon with improved elastic properties. Phys Rev B 38:9902

Keyes RW (1975) Bonding and antibonding potentials in group-IV semiconductors. Phys Rev Lett 34:1334