Study of donor–acceptor pair luminescence in highly doped and compensated Cz silicon

Physica Status Solidi (A) Applications and Materials Science - Tập 209 Số 10 - Trang 1917-1920 - 2012
B. Dridi Rezgui1, Jordi Veirman2, Sébastien Dubois2, Olivier Palais3
1Aix‐Marseille Université, IM2NP, Faculté des Sciences de Jérome, and CNRS, IM2NP, Faculté des Sciences de Jérome, 13397 Marseille, France
2CEA, LITEN, INES, 50 av. du Lac Léman, 73377 Le Bourget du Lac, France
3Aix-Marseille Université, IM2NP, Faculté des Sciences de Jérome, and CNRS, IM2NP, Faculté des Sciences de Jérome, 13397 Marseille, France

Tóm tắt

AbstractThe photoluminescence (PL) of highly doped and compensated Czochralski silicon has been investigated. The low‐temperature PL spectra show a donor‐to‐acceptor zero‐phonon broad band and clearly distinguished phonon replica shifting to the blue side with increasing the net doping concentration in silicon crystal. The data are consistent with DAP luminescence involving an acceptor level of about 46 meV above the valence band edge in silicon. The analysis of temperature evolution of the PL spectra indicate that the observed PL spectra are due to a donor–acceptor pair recombination with a donor level located at 46 meV. The redshift of this band with increasing excitation power was also observed. The dependence of the emission peak energy on the excitation power is characteristic of highly compensated material in which potential fluctuations influence the band structure.

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Tài liệu tham khảo

10.1063/1.3021300

10.1063/1.2982098

10.1063/1.3552302

10.1143/APEX.3.071301

10.1063/1.3585800

10.1063/1.3622560

Dean P. J., 1973, Progress in Solid State Chemistry, 1

10.1063/1.323631

10.1063/1.114566

10.1103/PhysRev.177.1182

10.1063/1.92630

10.1139/p82-142

10.1016/S0080-8784(08)62345-5

Pankove J. I., 1971, Optical Processes in Semiconductors

10.1007/978-3-662-02403-4_3

10.1016/S0167-9317(98)00244-5

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Thông tin xuất bản

Physica Status Solidi (A) Applications and Materials Science

Tập 209 Số 10

1917-1920

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