Study of a Cr doped TiO/sub 2/ derived from sol-gel process for gas sensing

COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices - Trang 69-72
J.M. Booth1, L. Nguyen2, C.J. Rix2, D.E. Mainwaring2, Y.X. Li, W. Wlodarski, S.H. Moslih3, S.P. Russo4
1School of Electrical & Computer Systems Engineering, RMIT University, Melbourne, Australia
2Departments of Appl. Chem., R. Melbourne Inst. of Technol., Vic., Australia
3Applied Physics, RMIT University, Melbourne, Australia
4Department of Applied Chemistry, RMIT University, Melbourne, Australia

Tóm tắt

The sol-gel route to thin bimetallic oxide sensor films was studied in terms of the evolution of a viscoelastic Ti gel precursor containing occluded Cr. The influence of Cr:Ti atomic ratio and annealing temperature was related to the resultant microstructure, morphology and oxygen sensing response of the annealed thin films. It was shown that progressive increase in Cr content changed the Ti-O properties from a n-type to a p-type semiconductor film with a commensurate reversal in sensor response.

Từ khóa

#Chromium #Temperature sensors #Thin film sensors #Annealing #Viscosity #Elasticity #Microstructure #Morphology #Semiconductor thin films #Semiconductor films

Tài liệu tham khảo

10.1021/ic00291a024 10.1016/0925-4005(93)85068-L 10.1006/jssc.1994.1178 10.1038/353737a0 10.1126/science.207.4427.139
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COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices

69-72

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