Structure optimisation of modern GaAs-based InGaAs/GaAs quantum-dot VCSELs for optical fibre communication

Opto-Electronics Review - 2009
Łukasz Piskorski1, Michał Wasiak1, Robert P. Sarzała1, W. Nakwaski1
1Institute of Physics, Technical University of Łódź, 219 Wólczańska Str., 90-924, Łódź, Poland

Tóm tắt

AbstractRoom-temperature (RT) continuous-wave (CW) performance of modern 1300-nm oxide-confined In(Ga)As/GaAs quantum-dot (QD) vertical-cavity surface-emitting diode lasers (VCSELs) taking advantage of many QD sheets is investigated using our comprehensive self-consistent simulation model to suggest their optimal design. Obviously, quantum dots should be as uniform as possible and as dense as possible to ensure high enough optical gain. Besides, our simulation reveals that efficient and uniform current injection into VCSEL active regions necessary to enhance excitation of the desired fundamental LP01 mode is accomplished in the VCSEL configuration with the broad-area bottom contact and the ring upper one as well as with the oxide aperture localized within the first period of the upper p-type DBR. The doping of the DBR mirrors is chosen as a compromise between their high enough electrical conductivity and low enough free-carrier absorption. The oxide aperture is additionally introducing the radial optical waveguiding. Moreover, our analysis has been concluded that VCSEL active regions should be composed of at least 9 QD sheets to acquire efficient RT CW operation. Furthermore, rather longer optical cavities are recommended in this case because localization of QD sheets should be adjusted to the anti-node positions of the optical cavity standing wave.

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