Structure and stability of ultrathin zirconium oxide layers on Si(001)

Applied Physics Letters - Tập 76 Số 4 - Trang 436-438 - 2000
M. Copel1, M. Gribelyuk2, Evgeni Gusev1
1IBM Research Division, T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598
2IBM Analytical Services, IBM Microelectronics Division, Rt. 52, Hopewell Junction, New York 12533

Tóm tắt

We have examined the structure of ultrathin ZrO2 layers on Si(001) using medium energy ion scattering and cross-sectional transmission electron microscopy. Films can be deposited on SiO2 layers with highly abrupt interfaces by atomic layer deposition. On HF stripped Si(001), nucleation was inhibited, resulting in poorer film morphology. ZrO2 showed remarkable stability against silicate formation, with no intermixing even after high temperature oxidation. The oxide is vulnerable to high temperature vacuum annealing, with silicidation occurring at temperatures above 900 °C.

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Applied Physics Letters

Tập 76 Số 4

436-438

Thông tin tác giả