Structure and properties of Cd x Hg1−x Te-metal contacts
Tóm tắt
A metal-semiconductor contact is a composite structure consisting of several nanodimensional layers. The contact properties depend strongly on the technique of metal deposition. A metal forms chemical compounds with the components of Cd
x
Hg1−x
Te (CMT), thus changing the properties of the surface layer. Mercury is accumulated at the interface with the metal, while tellurium is accumulated on the metal surface. The CMT compounds with metals, heats of their formation, and the Fermi level shifts are reported. The structure and properties of the interfaces between CMT and gold, silver, indium, aluminum, copper, and other metals, as well as the effect of sublayers of other metals and insulators, are described.
Tài liệu tham khảo
R. Mamedov, Metal-Semiconductor Contacts with a Spot Electric Field (Baku, Izd-vo BGU, 2003) [in Russian].
T. V. Blank and Yu. A. Gol’dberg, Fiz. Tekh. Poluprovodn. 41, 1281 (2008) [Semiconductors 41, 1263 (2008)].
J. Bardeen, Phys. Rev. 71(10), 717 (1947).
V. Krishnamurthy, A. Simmons, and C. R. Helms, J. Vac. Sci. Techn. A 8, 1147 (1990).
W. E. Spicer, J. Vac. Sci. Techn. A 8, 1174 (1990).
S. R. Wilks, J. R. Williams, and R. H. Williams, in Proc. of the Conf. on Properties of Narrow-Gap Cadmium-Based Compounds, INSPEC, IEE (London, 1994), Vol. A 7.1, p. 273 (1994).
S. R. Wilks, J. R. Williams, and R. H. Williams, in Proc. of the Conf. on Properties of Narrow-Gap Cadmium-Based Compounds, INSPEC, IEE (London, 1994), Vol. A 7.2, p. 280 (1994).