Statistical fluctuation analysis by Monte Carlo ion implantation method
Tóm tắt
This paper shows a new statistical fluctuation analysis method by Monte Carlo ion implantation and investigates Vt fluctuations due to statistical variation of dopant profile by 3D process-device simulation system. This method is very useful to analyze a statistical fluctuation in sub-100 nm MOSFETs efficiently.
Từ khóa
#Fluctuations #Monte Carlo methods #Ion implantation #Analytical models #Threshold voltage #Semiconductor process modeling #Computational modeling #Implants #Doping profiles #MOSFETsTài liệu tham khảo
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