Static-induction transistor for very-high-speed ICs
ICCSC'02. 1st IEEE International Conference on Circuits and Systems for Communications. Proceedings (IEEE Cat. No.02EX605) - Trang 404-407
Tóm tắt
The structure and model of a static-induction transistor (SIT) with Schottky barrier for very-high-speed ICs have been developed. Simulation analysis results of IC logic elements based on complementary SITs is provided. The prospects of VLSI realization based on complementary SITs is discussed.
Từ khóa
#Voltage #Schottky barriers #Very large scale integration #Doping #Tunneling #Ballistic transport #Logic #Frequency #Semiconductor process modeling #Temperature dependenceTài liệu tham khảo
ryndin, 2001, Very-high-speed VLSI elements on a base of static-induction field-effect transistors with Schottky barrier, Technol & Design in the Electronic Equipment, 44
konoplev, 2000, Field-effect transistors with currents limited by spatial charge, Proceedings of Seventh International Conference “Actual problems of solid-state electronics and microelectronics” (PEM-2000), 2, 72
henish, 1972, Silicon Carbide, 349
maller, 1989, Elements of integrated circuits, 630
stepanenko, 1973, Fundamentals of transistors and transistor schemes theory, 608
pozhela, 1989, Physics of High-Speed Transistors, 264