Stable breakdown characteristics of 600 V LDMOS by extended P-bottom region
60th DRC. Conference Digest Device Research Conference - Trang 63-64
Tóm tắt
A new LDMOS promising stable hard breakdown characteristics by releasing the crowded electric field at the gate oxide edge is proposed. Extending P-bottom into the n-drift region can stabilize the breakdown characteristics of LDMOS. The numerical calculations and experimental results have shown that a stable breakdown voltage of over 600 V can be obtained when enclosed P-bottom width to P-well is 10 /spl mu/m and a P-top dose of 1/spl times/10/sup 12/ cm/sup -2/ is used.
Từ khóa
#Electric breakdown #Breakdown voltage #Avalanche breakdown #Switches #Semiconductor device breakdown #Batteries #AC-DC power converters #Power supplies #Charge carrier processes #AccelerationTài liệu tham khảo
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