Spin-Torque Switching with the Giant Spin Hall Effect of Tantalum

American Association for the Advancement of Science (AAAS) - Tập 336 Số 6081 - Trang 555-558 - 2012
Luqiao Liu1, Chi‐Feng Pai1, Yi Li1, Hsin-wei Tseng1, Daniel C. Ralph1,2, R. A. Buhrman1
1Cornell University, Ithaca, NY, 14853, USA
2Kavli Institute at Cornell, Ithaca, NY 14853, USA.

Tóm tắt

Giant Spin Hall One of the primary challenges in the field of spin-electronics, which exploits the electron's spin rather than its charge, is to create strong currents of electrons with polarized spins. One way to do this is to use a ferromagnet as a polarizer, a principle used in magnetic tunnel junctions; however, these devices suffer from reliability problems. An alternative is the spin Hall effect, where running a charge current through a material generates a spin current in the transverse direction, but the efficiency of this process tends to be small. Liu et al. (p. 555 ) now show that the spin Hall effect in Tantalum in its high-resistance β phase generates spin currents strong enough to induce switching of the magnetization of an adjacent ferromagnet; at the same time, Ta does not cause energy dissipation in the ferromagnet. These properties allowed efficient and reliable operation of a prototype three-terminal device.

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Tài liệu tham khảo

10.1016/0304-8853(96)00062-5

10.1103/PhysRevB.54.9353

10.1103/PhysRevLett.84.3149

10.1038/nature01967

10.1016/j.jmmm.2007.12.019

10.1016/0375-9601(71)90196-4

10.1103/PhysRevLett.83.1834

10.1103/PhysRevLett.85.393

10.1103/PhysRevLett.92.126603

10.1126/science.1087128

10.1126/science.1105514

10.1038/nature04937

10.1038/nature08876

Liu L. Q. Lee O. J. Gudmundsen T. D. Ralph D. C. Buhrman R. A. Magnetic switching by spin torque from the spin Hall effect. http://arXiv.org/abs/1110.6846.

10.1063/1.1754294

10.1016/0040-6090(95)07043-5

10.1103/PhysRevB.77.165117

10.1103/PhysRevB.83.174405

10.1103/PhysRevLett.106.036601

Liu L. Q. Buhrman R. A. Ralph D. C. Review and analysis of measurements of the spin Hall effect in platinum. http://arXiv.org/abs/1111.3702.

10.1103/PhysRevLett.98.156601

10.1103/PhysRevLett.101.036601

10.1103/PhysRevLett.104.046601

10.1103/PhysRevB.82.214403

10.1103/PhysRevLett.105.216401

10.1016/S0304-8853(00)01097-0

10.1103/PhysRevLett.88.117601

10.1088/0022-3727/41/21/215001

10.1038/nature10309

10.1038/nmat2804

10.1103/PhysRevB.62.570

10.1038/nmat2613

10.1103/PhysRevLett.89.196801

10.1063/1.3579155

10.1063/1.3107262

10.1063/1.3481798

T. Kishi et al . “Lower-current and fast switching of a perpendicular TMR for high speed and high density spin-transfer-torque MRAM ” in Proceedings of the IEEE International Electron Devices Meeting 2008 San Francisco 15 to 17 December 2008 (IEEE New York 2008); 10.1109/IEDM.2008.4796680.10.1109/IEDM.2008.4796680

10.1103/PhysRevLett.96.037201

10.1038/nphys1095

10.1063/1.3237025

10.1109/TNANO.2008.2005187

10.1103/PhysRevLett.93.166603

Thông tin
Thông tin xuất bản

American Association for the Advancement of Science (AAAS)

Tập 336 Số 6081

555-558

Thông tin tác giả