Soft-error characteristics in bipolar memory cells with small critical charge

Idei1, Homma2, Nambu2, Sakurai2
1Hitachi, Ltd.
2Central Research Laboratory, Hitachi and Limited, Kokubunji, Japan

Tóm tắt

In this paper, first, the contribution of charge collected at the base and the collector to soft-error is investigated using computer simulation. Next, an effective charge model incorporating weight coefficients is proposed.

Từ khóa

#Sensitivity #Random access memory #Integrated circuit modeling #Life estimation #Discharges (electric) #Computational modeling #Alpha particles

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