Single high order transverse mode VCSELs
LEOS Summer Topical Meeting - Trang TuP1-TuP1
Tóm tắt
We fabricated 850 nm GaAs VCSELs with eight straight trenches crossing each other on the top surface. The diameter of an oxide confinement aperture was 10 /spl mu/m. We introduced a /spl pi/-phase shift layer alternately on. the eight separated surfaces by using a focused ion beam etch.
Từ khóa
#Vertical cavity surface emitting lasers #Power generation #Optical scattering #Surface resistance #Surface emitting lasers #Etching #Apertures #Optical fiber devices #Lasers and Electro-Optics Society #Data communicationTài liệu tham khảo
10.1109/68.849058
claisse, 1998, single high order mode vcsel, Electronics Letters, 34, 681, 10.1049/el:19980459
shinada, 0, CLEO2001
koyama, 0, IEEE Lasers Electro-Optics Society 2000 Annu Meeting (LEOS 2000)
10.1063/1.107523
10.1109/68.806837
10.1109/68.618474