Single crystal silicon MEMS fabrication technology using proton-implantation smart-cut technique
SENSORS, 2002 IEEE - Tập 1 - Trang 585-588 vol.1
Tóm tắt
A novel single crystal silicon MEMS fabrication process is proposed using proton-implantation smart-cut technique. Compared to conventional SOI wafer fabrication processes for MEMS applications, this technology can potentially result in a significant substrate and processing cost reduction. A single crystal silicon layer with 1.78 /spl mu/m thickness has been achieved using the proposed technique. Prototype structures such as cantilever beams and clamped-clamped micro-bridges have been successfully fabricated as demonstration vehicles for future micro-system implementations.
Từ khóa
#Silicon #Micromechanical devices #Fabrication #Substrates #Costs #Wafer bonding #Prototypes #Protons #Crystalline materials #Structural beamsTài liệu tham khảo
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