Simulation of substrate currents
Tóm tắt
Recently a new approach was presented to determine the high-frequency response of on-chip passive components and interconnects. The method solves the electric scalar and magnetic vector potentials in a prescribed gauge. The latter one is included by introducing an additional independent scalar field, whose field equation needs to be solved. This additional field is a mathematical aid that allows for the construction of a gauge-conditioned, regular matrix representation of the curl-curl operator acting on edge elements. This paper reports on the convergence properties of the new method and shows the first results of this new calculation scheme for VLSI-based structures at high frequencies. The high-frequent behavior of the substrate current, the skin effect and current crowding is evaluated.
Từ khóa
#Skin effect #Proximity effect #Convergence #Poisson equations #Very large scale integration #Physics #Geometry #Frequency domain analysis #Electrodynamics #Linear systemsTài liệu tham khảo
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