Simulation of quantum and scattering effects along the channel of ultra-scaled Si-based MOSFETs

As the dimensions of MOSFETs scale into deep sub-0.1 /spl mu/m, a clear understanding of both the effects of scattering and quantum interference is needed. In this work, the quantum transport simulator "Schrodinger Equation Monte Carlo" (SEMC) (L.F. Register, in Quantum-Based Electronic Devices and Systems, M. Dutta and M.A. Stroscio, eds., World Scientific, Singapore, p. 251, 1998) is used to examine the effects of scattering and quantum interference along the channel. The simulation results suggest that not only does scattering, and the modeling thereof, remain critical even for 10 nm devices, but the detailed nature of the scattering - elastic, inelastic, etc. - remains important.