Simulation and design of the silicon drag-force-gas flowsensor based on piezoresistive effect

SENSORS, 2002 IEEE - Tập 1 - Trang 627-632 vol.1
V.A. Kolchuzhin1, A.V. Shaporin1
1Department of SD&M, NSTU, Novosibirsk, Russia

Tóm tắt

A silicon drag-force-gas flowsensor based on piezoresistive effect has been developed for IC technology applications. The sensor has been tested at gas flow from 20 to 500 l/h with temperature varying from 18-100/spl deg/C. The experimental pattern of a silicon gas flowsensor was designed, fabricated and tested. The theoretical analysis and simulation of a flowsensor chip in an airflow was carried out for the investigation of flowsensor behavior and characteristics. The finite element method (FEM) of ANSYS-software has been employed for the complete numerical analysis of this structure.

Từ khóa

#Silicon #Piezoresistance #Temperature sensors #Testing #Application specific integrated circuits #Gas detectors #Fluid flow #Analytical models #Finite element methods #Numerical analysis

Tài liệu tham khảo

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