Silicon micromechanical structures fabricated by electrochemical process
SENSORS, 2002 IEEE - Tập 1 - Trang 575-579 vol.1
Tóm tắt
Silicon (Si) micromechanical structures were fabricated by means of sacrificial layers defined with porous silicon (PS) and masked by hydrogen ion implantation with adequate thermal annealing. The fabrication process to remove the PS layers with diluted KOH at room temperature does not cause damage in remaining Si microstructures which have less than 1 /spl mu/m thickness controlled by the anodization time.
Từ khóa
#Silicon #Micromechanical devices #Electrochemical processes #Hydrogen #Ion implantation #Annealing #Fabrication #Microstructure #Temperature control #Thickness controlTài liệu tham khảo
dantas, 2000, Otimizacao do processo de obtencao do PS por processo eletroquimico e sua obtencao em areas seletivas, Monografia apresentada a Faculdade de Tecnologia de sao Paulo
10.1016/S0924-4247(97)01669-5
10.1016/S0925-4005(01)00623-2
10.1016/0040-6090(95)91137-B
10.1016/S0925-4005(01)00856-5
10.1016/S0925-4005(01)00630-X
10.1016/0927-0248(95)00077-1
ducso, 1997, Porous silicon bulk micromachining for thermally isolated membrane formation, Sensors and Actuators A, 235, 10.1016/S0924-4247(97)01384-8
shaw, 1994, SCREAM I:a single mask, single-crystal silicon, reactive ion etching process for microeletromechanical structures, Sensors and Actuators A, 63, 10.1016/0924-4247(94)85031-3
10.1016/S0924-4247(97)01502-1
bartek, 1994, An integrated silicon color sensor using SEG technology, Sensors and Actuators A, 123, 10.1016/0924-4247(94)80099-5
diem, 1995, SOI SIMOX from bulk to surface micromachining, a new age for silicon sensors and actuators, Sensors and Actuators A, 8, 10.1016/0924-4247(94)00851-8
galeazzo, 2000, Caracterizacao e aplicacoes da fotoluminescencia do silicio poroso em sensores de gas, Tese de Doutorado apresentada a Universidade de Sao Paulo
salcedo, 1998, Silicio Poroso como material fotonico, Tese de Doutorado apresentada a Universidade de Sao Paulo
10.1109/PROC.1982.12331
10.1016/S0924-4247(97)01543-4
hedrich, 2000, Structuring of membrane sensors using sacrificial porous silicon, Sensors and Actuators A, 315, 10.1016/S0924-4247(00)00308-3