Silicon carbide for MEMS and NEMS - an overview

SENSORS, 2002 IEEE - Tập 2 - Trang 1109-1114 vol.2
C.A. Zorman1, M. Mehregany1
1Department of Electrical Engineering and Computer Science, Case Western Reserve University, Cleveland, OH, USA

Tóm tắt

Silicon carbide has long been known for its excellent mechanical, electrical and chemical properties, making it a leading material for microfabricated sensors and actuators designed for environments too harsh for Si-based devices. However many of the properties that make SiC attractive for harsh environment applications make it a challenging material to micromachine. Recent advances in deposition and patterning technologies have enabled the fabrication of 3C-SiC micro- and nanoelectromechanical devices with a level of sophistication comparable with Si devices. This paper presents a review of select advances used in the fabrication of SiC MEMS and NEMS structures.

Từ khóa

#Silicon carbide #Micromechanical devices #Nanoelectromechanical systems #Chemical sensors #Fabrication #Mechanical factors #Mechanical sensors #Actuators #Chemical technology #Nanoscale devices

Tài liệu tham khảo

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