Shock-Induced Localized Amorphization in Boron Carbide

American Association for the Advancement of Science (AAAS) - Tập 299 Số 5612 - Trang 1563-1566 - 2003
Mingwei Chen1, James W. McCauley2, Kevin J. Hemker1
1Department of Mechanical Engineering, Johns Hopkins University, Baltimore, MD 21218 USA
2U.S. Army Research Laboratory, Aberdeen Proving Ground, Aberdeen, MD 21005, USA

Tóm tắt

High-resolution electron microscope observations of shock-loaded boron carbide have revealed the formation of nanoscale intragranular amorphous bands that occur parallel to specific crystallographic planes and contiguously with apparent cleaved fracture surfaces. This damage mechanism explains the measured, but not previously understood, decrease in the ballistic performance of boron carbide at high impact rates and pressures. The formation of these amorphous bands is also an example of how shock loading can result in the synthesis of novel structures and materials with substantially altered properties.

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The help of T. J. Moynihan of Dynamic Science in supplying the shock-impacted B 4 C samples is gratefully acknowledged. We thank D. Dandekar E. Ma K. T. Ramesh D. Veblen and the Science reviewers for critical reviews and helpful comments regarding the manuscript. The Johns Hopkins Electron Microscopy Facility is made possible by grants from the W. M. Keck Foundation and the NSF. Research was sponsored by the Army Research Laboratory (ARMAC-RTP) and was accomplished under ARMAC-RTP cooperative agreement DAAD19-01-2-0003. The views and conclusions contained in this document are those of the authors and should not be interpreted as representing the official policies either expressed or implied of the Army Research Laboratory or the U.S. Government. The U.S. Government is authorized to reproduce and distribute reprints for government purposes notwithstanding any copyright notation hereon.

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American Association for the Advancement of Science (AAAS)

Tập 299 Số 5612

1563-1566

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