Separation of d.c. and a.c. competing effect of polysilicon-gate depletion in deep submicron CMOS circuit performance
Tài liệu tham khảo
Wong, 1988, IEDM Tech. Dig., 238
Lu, 1989, IEEE Electron Device Lett., 10, 192, 10.1109/55.31717
Hillenius, 1986, IEDM Tech. Dig., 252
Lee, 1992, IEEE Electron Device Lett., 13, 2, 10.1109/55.144932
Lin, 1992, A circuit simulation model for polysilicon gate depletion effect in MOSFET, Part I—theory and implementation, Intel Internal Memo
Jeng, 1988, IEDM Dig., 114
Lin, 1993, IEEE Trans. Electron Device, ED-40, 1024, 10.1109/16.210216
IEEE Trans. Electron Device (submitted).
Sheu, 1987, IEEE J. Solid-St. Circuits, SC-22, 558, 10.1109/JSSC.1987.1052773