Self-aligned GaAs p-channel enhancement mode MOS heterostructure field-effect transistor
Tóm tắt
Self-aligned GaAs enhancement mode MOS heterostructure field-effect transistors (MOS-HFET) have been successfully fabricated for the first time. The MOS devices employ a Ga2O3 gate oxide, an undoped Al/sub 0.75/Ga/sub 0.25/As spacer layer, and undoped In/sub 0.2/Ga/sub 0.8/As as channel layer. The p-channel devices with a gate length of 0.6 μm exhibit a maximum DC transconductance g/sub m/ of 51 mS/mm which is an improvement of more than two orders of magnitude over previously reported results. With the demonstration of a complete process flow and 66% of theoretical performance, GaAs MOS technology has moved into the realm of reality.
Từ khóa
#Gallium arsenide #HEMTs #MODFETs #MOSFETs #Epitaxial layers #MOS devices #Transconductance #Indium #Semiconductor device modeling #HeterojunctionsTài liệu tham khảo
10.1116/1.570583
10.1063/1.100961
10.1063/1.115725
10.1109/IEDM.1996.554137
ren, 1997, iii–v compound semiconductor mosfets using <formula><tex>$\hbox{ga}_{2}\hbox{o}_{3}(\hbox{gd}_{2}\hbox{o}_{3})$ </tex></formula> as gate dielectric, IEEE GaAs IC Symp, 18
10.1016/S0038-1101(97)00181-0
wang, 1999, advances in gaas mosfets using <formula> <tex>$\hbox{ga}_{2}\hbox{o}_{3}(\hbox{gd}_{2}\hbox{o}_{3})$</tex></formula> as gate oxide, Proc Mat Res Soc Symp, 573, 219, 10.1557/PROC-573-219
yi, 0, scanning tunneling microscopy and spectroscopy of gallium oxide deposition and oxidation on gaas (001)-(2<formula><tex>$\,\times \,$ </tex></formula>4), Phys Rev Lett
10.1063/1.365343
yu, 2000, Method of forming a gate quality oxide-compound semiconductor structure
10.1109/IEDM.1989.74196
10.1109/T-ED.1978.19139
10.1049/el:19780336
colquhoun, 1978, improved enhancement/depletion gaas mosfet using anodic oxide as the gate insulator, IEEE Transactions on Electron Devices, 25, 375, 10.1109/T-ED.1978.19084
10.1049/el:19760043
10.1016/0040-6090(79)90066-X
10.1016/0038-1101(74)90100-2
10.1016/0038-1101(65)90074-2
10.1007/978-1-4684-4835-1
10.1109/GAAS.1993.394486
10.1147/rd.221.0072
1998, G-PISCES-IIB Manual
10.1063/1.359055
10.1109/16.595929