Selective Etching of Silicon from Ti<sub>3</sub>SiC<sub>2</sub> (MAX) To Obtain 2D Titanium Carbide (MXene)

Angewandte Chemie - Tập 130 Số 19 - Trang 5542-5546 - 2018
Mohamed Alhabeb1, Kathleen Maleski1, Tyler S. Mathis1, Asia Sarycheva1, Christine B. Hatter1, Simge Uzun1, Ariana Levitt1, Yury Gogotsi1
1A.J. Drexel Nanomaterials Institute and Department of Materials Science and Engineering, Drexel University, 3141 Chestnut Street, Philadelphia, PA, 19104 USA

Tóm tắt

AbstractUntil now, MXenes could only be produced from MAX phases containing aluminum, such as Ti3AlC2. Here, we report on the synthesis of Ti3C2 (MXene) through selective etching of silicon from titanium silicon carbide—the most common MAX phase. Liters of colloidal solutions of delaminated Ti3SiC2‐derived MXene (0.5–1.3 mg mL−1) were produced and processed into flexible and electrically conductive films, which show higher oxidation resistance than MXene synthesized from Ti3AlC2. This new synthesis method greatly widens the range of precursors for MXene synthesis.

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