Seebeck coefficient in SiC/Si heterojunction for self-powered thermal sensor

Pablo Guzman1, Toan Dinh2,3,1, Thanh Nguyen1,2, Van Thanh Dau4, Abu Riduan Md Foisal1, Hung Nguyen1, Hieu Vu1, Tuan-Khoa Nguyen1, Hoang-Phuong Phan1, Huaizong Li4, Nam-Trung Nguyen1, Dzung Viet Dao1,4
1Queensland Micro and Nanotechnology Centre, Griffith University, Queensland, Australia
2Centre for Future Materials, University of Southern Queensland, Australia
3School of Mechanical and Electrical Engineering, University of Southern Queensland, Australia
4School of Engineering and Built Environment, Griffith University, Queensland, Australia

Tóm tắt

Development of new materials with high thermoelectric coefficient will expand the capability of thermoelectric sensors. In this work, we investigate the thermoelectric properties of silicon carbide (SiC) on silicon (Si) heterojunction towards self-powered temperature sensing applications. A SiC/Si heterojunction device was designed and fabricated to measure the Seebeck coefficient. The device showed a high Seebeck coefficient of -156.11 µV at 336 K, which progressively increased with increasing temperature and reached -374.78 µV at 383 K. These thermoelectric characteristics indicate superior result compared to previous polycrystalline and monocrystalline SiC thin films. The innovative heterojunction demonstrated in this work holds promises for developing highly sensitive self-powered thermal sensors.

Từ khóa

#Silicon Carbide #Seebeck coefficient #heterojunction #self-powered thermal sensors

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