Scattering of electrons in silicon inversion layers by remote surface roughness

Journal of Applied Physics - Tập 94 Số 1 - Trang 392-399 - 2003
F. Gámiz1, J.B. Roldán1
1Departamento de Electrónica y Tecnologı́a de Computadores, Universidad de Granada, Avd. Fuentenueva s/n, 18071 Granada, Spain

Tóm tắt

A model to study the effect of the roughness at the poly-Si/SiO2 interface in silicon inversion layers on the electron mobility is obtained. Screening of the resulting perturbation potential by the channel carriers is taken into account, considering Green’s functions for metal–oxide–semiconductor geometry, i.e., taking into account the finite thickness of the gate oxide. Mobility of electrons is evaluated at room temperature by the Monte Carlo method, taking into account the simultaneous contribution of phonon scattering, SiO2/Si interface roughness scattering, Coulomb scattering, and remote surface roughness scattering. The contribution of excited subbands is considered. The resulting remote surface roughness scattering is shown to be strongly dependent on the oxide thickness, and degrades mobility curves at low inversion charge concentrations. The results obtained show that the effect of this scattering mechanism cannot be ignored when the oxide thickness is below 5 nm, (as in actual devices), even when (as is usual) very high doping concentrations are used.

Từ khóa


Tài liệu tham khảo

Tech. Dig. - Int. Electron Devices Meet., 1996, 109

1987, J. Appl. Phys., 62, 4212, 10.1063/1.339092

1997, IEEE Electron Device Lett., 18, 417, 10.1109/55.622515

Tech. Dig. - Int. Electron Devices Meet., 1999, 241

2002, Jpn. J. Appl. Phys., Part 1, 41, 2348, 10.1143/JJAP.41.2348

2002, Appl. Phys. Lett., 81, 2391, 10.1063/1.1510178

2001, J. Appl. Phys., 89, 1205, 10.1063/1.1332423

1967, Phys. Rev., 163, 816, 10.1103/PhysRev.163.816

1985, Phys. Rev. B, 32, 8171, 10.1103/PhysRevB.32.8171

1982, Rev. Mod. Phys., 54, 437, 10.1103/RevModPhys.54.437

1993, Phys. Rev. B, 48, 2244, 10.1103/PhysRevB.48.2244

1994, J. Appl. Phys., 75, 924, 10.1063/1.356448

1994, IEEE Trans. Electron Devices, ED-42, 258

1997, Semicond. Sci. Technol., 12, 321, 10.1088/0268-1242/12/3/014

1983, Rev. Mod. Phys., 55, 645, 10.1103/RevModPhys.55.645

1981, Ann. Phys. (N.Y.), 133, 217, 10.1016/0003-4916(81)90250-5

1971, Ann. Phys. (N.Y.), 67, 438, 10.1016/0003-4916(71)90149-7

2002, J. Appl. Phys., 92, 7320, 10.1063/1.1521796

1994, Semicond. Sci. Technol., 10, 592

Thông tin
Thông tin xuất bản

Journal of Applied Physics

Tập 94 Số 1

392-399

Thông tin tác giả