Scanning probe lithography with real time position control interferometer
Proceedings of the 2nd IEEE Conference on Nanotechnology - Trang 13-15
Tóm tắt
We have constructed an integrated SPM and an xy-position interferometer to properly control the dimensions of the lithography patterns. The tracking error of xy-dimensional positioning system is about 2 nm accuracy and the positioning resolution could reach 0.1 nm. The scanning probe microscope (SPM) oxidation and anisotropic tetra-methyl ammonium hydroxide (TMAH) etching were used to produce smooth and uniform nanopatterns on silicon substrates. The combination of SPM oxidation and real time position control is a promising approach to accurately produce prototyping of functional nano-devices.
Từ khóa
#Position control #Interferometric lithography #Scanning probe microscopy #Oxidation #Optical interferometry #Atomic force microscopy #Silicon #Prototypes #Laser feedback #Laser stabilityTài liệu tham khảo
10.1063/1.108268
10.1063/1.1476072
10.1063/1.113230
10.1088/0953-8984/5/33A/154
2002, Advanced Semiconductor & Organic Nano-techniques, part 3 (edited by Morkoc), Academic Press
0, International technology road map for semiconductors 2000, ITRS 2000