SHORT COMMUNICATION: ACCELERATED PUBLICATION: Diode characteristics in state-of-the-art ZnO/CdS/Cu(In1?xGax)Se2 solar cells
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Contreras, 1999, Progress in Photovoltaics Research and Applications, 7, 311, 10.1002/(SICI)1099-159X(199907/08)7:4<311::AID-PIP274>3.0.CO;2-G
Markus Gloeckler, Colorado State University.
Ramanathan, 2004, Thin Solid Films
Physics of Semiconductor Devices, 2nd edn. Wiley: Chichester; 1981.
Characterization and junction performance of highly efficient ZnO/CdS/CuInSe2 thin film solar cells. Proceedings of the 12th European Photovoltaic Energy Conference, R. Hill, 1994; 1755.
On the role of Na and modifications to Cu(In,Ga)Se2 absorber materials using thin-MF (M=Na, K, Cs) precursor layers. Proceedings of the 26th IEEE Photovoltaic Specialists Conference, 1997; 359-362.
EBIC studies of junction formation and the role of oxygen in thin-film CdS/CuInSe2 solar cells. Proceedings of the 18th IEEE Photovoltaic Specialists Conference, 1985; 1648-1654.
Defect chalcopyrite Cu(In1?xGax)3Se5 materials and high-Ga-content Cu(In,Ga)Se2-based solar cells. Proceedings of the 25th IEEE Photovoltaic Specialists Conference, 1996; 809-812.
ZnO/ZnS(O,OH)/Cu(In,Ga)Se2/Mo solar cell with 18·6% efficiency. Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion, Osaka, 2003; 2LN-C-08.