Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours

Applied Physics Letters - Tập 70 Số 11 - Trang 1417-1419 - 1997
Shuji Nakamura1, Masayuki Senoh1, Shin‐ichi Nagahama1, Naruhito Iwasa1, Takehiro Yamada1, Toshio Matsushita1, Yasunobu Sugimoto1, Hiroyuki Kiyoku1
1Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan

Tóm tắt

The continuous-wave (cw) operation of InGaN multi-quantum-well structure laser diodes (LDs) was demonstrated at room temperature (RT) with a lifetime of 27 h. The threshold current and the voltage of the LDs were 80 mA and 5.5 V, respectively. The threshold current density was 3.6 kA/cm2. Longitudinal modes with a mode separation of 0.042 nm were observed under cw operation at RT. When the temperature of the LDs was varied, large mode hopping of the emission wavelength was observed between adjacent quantum well or quantum dot subbands. The carrier lifetime and the threshold carrier density were estimated to be 10 ns and 2×1020/cm3, respectively.

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Tài liệu tham khảo

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Thông tin xuất bản

Applied Physics Letters

Tập 70 Số 11

1417-1419

Thông tin tác giả