Room-Temperature Ultraviolet Nanowire Nanolasers

American Association for the Advancement of Science (AAAS) - Tập 292 Số 5523 - Trang 1897-1899 - 2001
Michael H. Huang1, Samuel S. Mao2, H. Feick3, Haoquan Yan1, Yiying Wu1, Hannes Kind1, Eicke R. Weber3, Richard E. Russo2, Peidong Yang1,3
1Department of Chemistry, University of California.
2Environmental Energy Technology Division,
3Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA

Tóm tắt

Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated. The self-organized, <0001> oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process. These wide band-gap semiconductor nanowires form natural laser cavities with diameters varying from 20 to 150 nanometers and lengths up to 10 micrometers. Under optical excitation, surface-emitting lasing action was observed at 385 nanometers, with an emission linewidth less than 0.3 nanometer. The chemical flexibility and the one-dimensionality of the nanowires make them ideal miniaturized laser light sources. These short-wavelength nanolasers could have myriad applications, including optical computing, information storage, and microanalysis.

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Tài liệu tham khảo

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A simple estimation of the possible number of transversal modes that a waveguide can support indicates that our nanowires with diameters between 80 and 120 nm are actually single-mode waveguides for ultraviolet light.

This work was supported by the Camille and Henry Dreyfus Foundation the 3M Corporation the NSF through a Career Award (DMR-0092086) the U.S. Department of Energy and the University of California Berkeley. P.Y. is an Alfred P. Sloan Research Fellow. Work at the Lawrence Berkeley National Laboratory was supported by the Office of Science Basic Energy Sciences Division of Materials Science of the U.S. Department of Energy under contract DE-AC03-76SF00098. H.K. thanks the Swiss National Science Foundation for financial support. We thank the National Center for Electron Microscopy for the use of their facilities.

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American Association for the Advancement of Science (AAAS)

Tập 292 Số 5523

1897-1899

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