Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°K
Tóm tắt
Từ khóa
Tài liệu tham khảo
1967
1967
Neuberger, 1967
Conwell, 1958, Proc. Instn Radio Engrs, 46, 1281
Neuberger, 1965
Neuberger, 1964
1967
1967
Neuberger, 1967
Conwell, 1958, Proc. Instn Radio Engrs, 46, 1281
Neuberger, 1965
Neuberger, 1964