Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°K

Solid-State Electronics - Tập 11 Số 6 - Trang 599-602 - 1968
Simon M. Sze1, J.C. Irvin1
1Bell Telephone Laboratories, Inc., Murray Hill, New Jersey USA

Tóm tắt

Từ khóa


Tài liệu tham khảo

1967

1967

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