Resistive switching memory effect of ZrO2 films with Zr+ implanted

Applied Physics Letters - Tập 92 Số 1 - 2008
Qi Liu1, Weihua Guan2,1, Shibing Long1, Rui Jia1, Ming Liu1, Junning Chen3
1Institute of Microelectronics Laboratory of Nano-fabrication and Novel Devices Integrated Technology, , Chinese Academy of Sciences, Beijing 100029, People’s Republic of China
2Electrical Engineering
3Anhui University College of Electronics and Technology, , Hefei 230039, People’s Republic of China

Tóm tắt

The Au∕Cr∕Zr+-implanted-ZrO2∕n+-Si sandwiched structure exhibits reversible bipolar resistive switching behavior under dc sweeping voltage. The resistance ratio (Rratio) of high resistive state and low resistive state is as large as five orders of magnitude with 0.5V readout bias. Zr+-implanted-ZrO2 films exhibit good retention characteristics and high device yield. The impact of implanted Zr+ ions on resistive switching performances is investigated. Resistive switching of the fabricated structures is explained by trap-controlled space charge limited current conduction.

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Tài liệu tham khảo

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Applied Physics Letters

Tập 92 Số 1

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