Recombination and loss analysis in polythiophene based bulk heterojunction photodetectors

Applied Physics Letters - Tập 81 Số 20 - Trang 3885-3887 - 2002
Pavel Schilinsky1,2, Christoph Waldauf1,2, Christoph J. Brabec2
1Department of Energy and Semiconductor Research, University of Oldenburg, 26129 Oldenburg (Germany)
2SIEMENS AG, CT MM1, Innovative Polymers, Paul Gossenstrasse 100, D-91052 Erlangen, Germany

Tóm tắt

The monochromatic external quantum efficiency of a bulk heterojunction photodetector based on a blend of poly-3(hexylthiophene) with a methanofullerene is reported to be as high as 76% at the peak maximum at 25 °C. Analysis of the temperature dependence, the illumination intensity dependence together with absorption measurements in reflection geometry, allow calculation of the internal quantum efficiency of the device close to 100% at the peak maximum. Recombination of photoinduced carriers is negligible or even absent in these photodetectors when operated in the photovoltaic mode. Optical losses in these bulk heterojunction devices are analyzed.

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Applied Physics Letters

Tập 81 Số 20

3885-3887

Thông tin tác giả