Rapid thermal annealing of NTD Si
COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices - Trang 411-414
Tóm tắt
Neutron transmutation doped silicon (NTD Si) wafers were annealed in a commercial rapid thermal processor (AET RX Series). As a comparison, the wafers were also annealed in a conventional electric furnace. Successful rapid thermal annealing was demonstrated by the facts that no deep level impurities were detected by deep level transient spectrometry (DLTS), and the wafers annealed with two methods had identical final resistivities.
Từ khóa
#Rapid thermal annealing #Neutrons #Furnaces #Temperature #Rapid thermal processing #Australia #Silicon #Conductivity #Impurities #LatticesTài liệu tham khảo
reid, 1996, Solid State Technology, 63
lawson, 0
10.1016/0168-583X(94)00467-6
schroder, 1990, Semiconductor Material and Device Characterization
10.1016/0022-0248(90)90293-T
10.1002/pssa.2211130259
alexiev, 1992, Nuclear Instruments and Methods in Physics Research, b69, 510, 10.1016/0168-583X(92)95308-E