Rapid annealing of reactively sputtered precursors for Cu2ZnSnS4 solar cells

Progress in Photovoltaics: Research and Applications - Tập 22 Số 1 - Trang 10-17 - 2014
Jonathan J. Scragg1, Tove Ericson1, Xavier Fontané2, Víctor Izquierdo‐Roca2, A. Pérez-Rodrı́guez2,3, Tomáš Kubart1, Marika Edoff1, Charlotte Platzer‐Björkman1
1Ångström Solar Center, Solid State Electronics Uppsala University 751 21 Uppsala Sweden
2Catalonia Institute for Energy Research (IREC) C. Jardins de les Dones de Negre 1 08930 Sant Adrià del Besòs Barcelona Spain
3Departament d'Electrònica, IN2UB Universitat de Barcelona C. Martí i Franquès 1 08028 Barcelona Spain

Tóm tắt

ABSTRACTCu2ZnSnS4 (CZTS) is a promising thin‐film absorber material that presents some interesting challenges in fabrication when compared with Cu(In,Ga)Se2. We introduce a two‐step process for fabrication of CZTS films, involving reactive sputtering of a Cu‐Zn‐Sn‐S precursor followed by rapid annealing. X‐ray diffraction and Raman measurements of the sputtered precursor suggest that it is in a disordered, metastable CZTS phase, similar to the high‐temperature cubic modification reported for CZTS. A few minutes of annealing at 550 °C are sufficient to produce crystalline CZTS films with grain sizes in the micrometer range. The first reported device using this approach has an AM1.5 efficiency of 4.6%, with Jsc and Voc both appearing to be limited by interface recombination. Copyright © 2012 John Wiley & Sons, Ltd.

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Progress in Photovoltaics: Research and Applications

Tập 22 Số 1

10-17

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