Radius of curvature in MBE grown heterostructures
COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices - Trang 214-217
Tóm tắt
Misfit stress in MBE grown heterostructures causes these structures to bend. Former theories on semiconductor wafer curvature have been re-examined and errors that have persisted in the literature have been corrected. We present an approach to describe the wafer curvature of strained layer systems using basic physical equations. A description of the position of the neutral plane for epitaxial heterostructures is presented. Wafer curvature has been studied using X-ray diffraction and the results are in good agreement with the theory.
Từ khóa
#Lattices #Substrates #Capacitive sensors #Molecular beam epitaxial growth #Equations #X-ray diffraction #Epitaxial layers #Gallium arsenide #Stress #Error correctionTài liệu tham khảo
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10.1063/1.337772
10.1063/1.334797
davidenkov, 1961, Sov Phys Solid State, 2, 2595