Radiation-enhanced thermal oxidation of silicon

Motyagin, A.I., Sukharev, A.A., and Yanenko, V.V., USSR Inventor’s Certificate no. 1 807 791, 1990. citation_title=Nadezhnost’ i kontrol’ kachestva integral’nykh mikroskhem. Tekst lektsii; citation_publication_date=2004; citation_id=CR2; citation_author=A.I. Andreev; citation_author=I.I. Katerinich; citation_author=V.D. Popov; citation_publisher=MIFI citation_journal_title=IEEE Trans. Nucl. Sci.; citation_title=An Electrical Technique to Measure the Radiation Susceptibility of Gate Insulator; citation_author=H.E. Boesch, J. McGarrity; citation_volume=26; citation_publication_date=1979; citation_pages=4814; citation_id=CR3 citation_journal_title=IEEE Trans. Nucl. Sci.; citation_title=Defect Structure and Irradiation Behavior of Noncrystalline SiO2 ; citation_author=A.G. Revesz; citation_volume=18; citation_publication_date=1971; citation_pages=113; citation_id=CR4 citation_journal_title=IEEE Trans. Nucl. Sci.; citation_title=Origin of Interface States and Oxide Charges Generated by Ionizing Radiation; citation_author=C.T. Sah; citation_volume=23; citation_publication_date=1976; citation_pages=1563; citation_id=CR5 citation_journal_title=J. Appl. Phys.; citation_title=Generation-Annealing Kinetics of the Interface Donor States at 0.25 eV above the Midgap and the Turn-Around Phenomena on Oxidized Silicon during Avalanche Electron Injection; citation_author=C.-T. Sah, J.Y.-C. Sun, J.J.-T. Tzou; citation_volume=54; citation_publication_date=1983; citation_pages=2547; citation_doi=10.1063/1.332324; citation_id=CR6 citation_title=The Defect Structure of the Si-SiO Interface, a Model Based on Trivalent Silicon and Its Hydrogen Compounds; citation_inbook_title=The Physics of SiO and Its Interfaces; citation_publication_date=1978; citation_pages=328; citation_id=CR7; citation_author=C.M. Svensson; citation_publisher=Pergamon citation_journal_title=IEEE Trans. Nucl. Sci.; citation_title=Chemical and Structural Aspects of the Irradiation Behavior of SiO2 Films and Silicon; citation_author=A.G. Revesz; citation_volume=24; citation_publication_date=1977; citation_pages=2102; citation_id=CR8 citation_journal_title=IEEE Trans. Nucl. Sci.; citation_title=Experimental Observations of the Chemistry of the SiO2/Si Interface; citation_author=F.J. Grunthaner, J. Maserjian; citation_volume=24; citation_publication_date=1977; citation_pages=2108; citation_id=CR9 citation_journal_title=IEEE Trans. Nucl. Sci.; citation_title=Radiation-Induced Defects in SiO2 as Determined with XPS; citation_author=F.J. Grunthaner, P.J. Grunthaner, J. Maserjian; citation_volume=29; citation_publication_date=1982; citation_pages=1462; citation_id=CR10 citation_journal_title=IEEE Trans. Nucl. Sci.; citation_title=X-ray Photoelectron Spectroscopy Studies of Structure Induced Radiation Effects at the Si/SiO2 Interface; citation_author=F.J. Grunthaner, F.B. Lewis, N. Zamini; citation_volume=27; citation_publication_date=1980; citation_pages=1640; citation_id=CR11 citation_title=Process and Device Simulation for MOS-VLSI Circuits; citation_publication_date=1983; citation_id=CR12; citation_publisher=Martinus Nijhoff